| 摘要 |
PROBLEM TO BE SOLVED: To enable an epitaxial layer to be easily and selectively formed through a method different from a selective epitaxial growth method and to reduce labor required for maintaining a device. SOLUTION: An element isolating region 2 and a well layer 3 are formed on a silicon substrate 1, and then a silicon layer 6 of low-impurity concentration is deposited on a region including the element isolating region 2 and an active region 5 through a CVD method. At this point, a single crystal silicon is epitaxially grown on the active region 5 in which the silicon substrate 1 is exposed, but an amorphous silicon is grown on the element isolating region 2. Thereafter, by the use of etchant containing a hydrofluoric acid and a nitric acid, only the amorphous silicon formed in the element isolating region 2 is selectively removed by etching, and the single crystal silicon formed in the active region 5 is hardly etched. By this setup, an epitaxial layer is formed only in the active region 5.
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