发明名称 |
SOFT RECOVERY DIODE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a soft recovery diode which is connected in parallel with a control device of an inverter circuit that is required to operate at a high speed, so as to protect the control device connected to the diode in parallel against damage caused by the peak of an oscillating reverse voltage when the reverse voltage reaches a prescribed voltage in an oscillating manner by circuit impedance. SOLUTION: The microscopic structure of a P-type semiconductor layer is formed through a manner in which disks are decreased enough in vertical dimension (depth) and expanded enough in horizontal dimension by selective diffusion.
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申请公布号 |
JP2002026339(A) |
申请公布日期 |
2002.01.25 |
申请号 |
JP20000203297 |
申请日期 |
2000.07.05 |
申请人 |
SANSHA ELECTRIC MFG CO LTD |
发明人 |
YAMAMOTO TAKESHI;ISHIKURA KAZUHISA;MATSUMOTO KOJI |
分类号 |
H01L29/861;H01L21/329;(IPC1-7):H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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