SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical device having a self-aligned inner stripe laser structure and does not receive COD even at high-output time by maintaining a low threshold current and high efficiency and a method of manufacturing the device. SOLUTION: The semiconductor optical device has a first-conductivity clad layer 22, an active layer 23, a first second-conductivity clad layer 24, a current blocking layer 26 having an opening 42 successively formed on a substrate 21 and a second second-conductivity clad layer 28 formed in the opening 42 and at least on part of the current blocking layer 26 on both sides of the opening 42. The band gap of the active layer 23 at both end sections of an optical waveguide is made larger than that of the layer 23 in a current injecting area at the center of the optical waveguide by performing heat treatment after zinc diffusion is made by using a layer in which a zinc-containing impurity is diffused.