| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of an amorphous silicon germanium thin film wherein a desired film formation velocity and conversion efficiency can be obtained and formation of a good thin film is possible, and a photoelectric conversion device. SOLUTION: Gas which becomes a silicon supply source, gas which becomes a germanium supply source, and gas which becomes a hydrogen supply source, are supplied. An amorphous silicon germanium thin film whose atomic composition ratio Ge/Si of germanium and silicon in a thin film is 0.4 or more and 1 or less is manufactured on a substrate by plasma CVD method. A substrate temperature is made 200 deg.C or higher and 280 deg.C or lower and a film formation pressure of the supply gas is made 55 Pa or more and 90 Pa or less, hydrogen dilution rate (flow rate between the gas of hydrogen supply source and the gas of silicon supply source) is made 20 or more and 80 or less, a plasma supply power is made 20 mW/cm2 or more and 50 mW/cm2 or less, and a thin film is manufactured.</p> |
