| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having electroless plating bumps of straight shape and a method for fabricating the semiconductor device while minimizing increase of labor. SOLUTION: An Al pad 11 is formed on an insulating film (not shown) in the upper layer of an integrated circuit formed on an Si substrate 10 and a protective film 12 of SiO2 is formed on the periphery thereof. In an electric connection area not coated with the protective film 12 on the Al pad 11, an electroless Ni plating layer 13 is formed by self-depositing Ni plating and a thin Au plating layer 14 is formed thereon. In order to impart directivity during growth of plating, a hydrophobic surface repelling electroless plating liquid is formed for the protective film 12 and the electroless Ni plating layer 13 is self-deposited selectively in the direction directly above the electric connection area.
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