发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make treatment of a semiconductor wafer easy and prevent damage in a semiconductor-wafer manufacturing method, in which the semiconductor wafer is half-diced and its characteristics are estimated. SOLUTION: This manufacturing method includes a step of applying a soluble adhesive with at least suitable conductivity maintaining effect to a semiconductor-wafer mounting face made of conductive hard board, in which at least the semiconductor-wafer mounting face and the opposite face have conductivity and continuity with each other, a step of sticking the semiconductor wafer to the conductive hard board through the soluble adhesive with conductive maintaining effect, a step of half-dicing the semiconductor wafer stuck to the face of the conductive hard board while a given thickness of the semiconductor wafer is left, a step of evaluating the element characteristics of the half-diced semiconductor wafer stuck on the conductive hard board, a step of dissolving the soluble adhesive after the evaluation of the element characteristics of the semiconductor wafer, and peeling off the half-diced semiconductor wafer from the conductive hard board, and a step of subjecting the peeled semiconductor wafer to element isolation.
申请公布号 JP2002025947(A) 申请公布日期 2002.01.25
申请号 JP20000207993 申请日期 2000.07.10
申请人 DOWA MINING CO LTD 发明人 YASUDA KOKI;SASAKI SHIGERU
分类号 H01L21/66;H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/66
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