| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a copper metal wiring for semiconductor elements which prevents voids or seams from appearing in the bottoms of holes during copper depositing of a copper precursor. SOLUTION: The method comprises a step of patterning specified regions of a layer insulation film 14 to form a damascene pattern, a step of forming a diffused barrier layer 15 on the entire structure including the damascene pattern after a cleaning process, a step of forming a chemical reinforcing agent layer 17 on the barrier layer, a step of spin-rinsing the entire structure having the reinforcing layer using a wet cleaning solution, a step of warm annealing to leave the reinforcing agent layer only on the bottom of the damascene pattern, a step of forming a first and second copper layers 18, 19 one after the other on the entire structure with the left reinforcing agent layer, and a step of executing a cleaning process to bury the first and second copper layers in only the interior of the damascene pattern after an annealing process.
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