| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth method of a semiconductor layer which can raise the doping amount (activation rate of Zn) at a saturation point of Zn when a p-type AlGaInP semiconductor layer is made to grow, and a manufacturing method of a semiconductor light emitting element wherein the growth method of the semiconductor layer is used. SOLUTION: In a process for forming a p-type AlGaInP III-V compound semiconductor layer comprising zinc by using dimethylzinc, etc., by a metal organic vapor phase epitaxy, a growth velocity is made at least 0.3 nm/s. |
