| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an ohmic electrode layer for a GaN LED. SOLUTION: This method includes a process that grows an alloy thin-film layer on a P-type gallium nitride epitaxial growth layer, a process that uses the lift-off method for patterning the alloy thin-film layer to a circular transmission line model shape, and a process that appropriately heat-treats the alloy thin-film layer for obtaining improved ohmic characteristics. Also, the method uses the alloy thin-film layer as a P-side ohmic electrode layer, thus reducing the series resistance between the P-side and N-side ohmic electrode layers, and at the same time the voltage drop in the forward direction of a light emitting diode. |
