| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a metal interconnection of a semiconductor device, where a selective part of a damascene pattern can be easily filled in using a copper precursor by forming a diffusion preventive film in the form of a spacer on a sidewall of the damascene pattern to prevent the increase in via resistance, and selectively forming a chemical reinforcement layer in the damascene pattern, using the fact that the chemical reinforcement layer has a selective reactivity. SOLUTION: The method of forming a metal interconnection of a semiconductor device comprises a step of preparing a semiconductor substrate formed with an interlayer insulation film consisting of first, second, and third insulation films formed on a lower metal interconnection; a step of forming a damascene pattern, consisting of a trench and via in the interlayer insulation film; a step of forming a diffusion preventing film spacer on sidewalls of the trench and via; a step of selectively forming the chemical reinforced layer on a second insulation film forming the bottom face of the trench and on the lower metal layer forming the bottom face of the via; a step of forming a copper layer by CVD method; and a step of forming a copper metal interconnection by conducting a reduction heat treatment and a CMP process. |
