| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect device which is more improved in a rate of resistance change than usual so as to be improved in detection sensitivity to an applied magnetic field. SOLUTION: A first laminate 13 and a second laminate 14 are equipped with a first and a second ferromagnetic layer, 3 and 5, which are opposed to each other, a first non-magnetic conductive layer 4 provided between the ferromagnetic layers 3 and 5, and an antiferromagnetic layer 2 which is magnetically coupled with the first ferromagnetic layer 3 to fix the direction of magnetization of the ferromagnetic layer 3 respectively. The second laminate 14 is laminated on the first laminate 13 through the intermediary of a conductive hard magnetic layer 8, a second non-magnetic conductive layer 6 is provided between the second ferromagnetic layer 5 of the first laminate 13 and the conductive hard magnetic layer 8, and a third non-magnetic conductive layer 7 is disposed between the conductive hard magnetic layer 8 and the second ferromagnetic layer 5 of the second laminate 14, by which the magnetization of the second ferromagnetic layer 5 can be freely rotated, depending on an applied magnetic field.
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