| 摘要 |
PROBLEM TO BE SOLVED: To provide a system for measuring actual time and controlling at an original site of CMP process in a method for determining the terminal point of CMP, by solving a problem of laborious work with much time and cost because of individual test for each wafer after flattening under conditions that the grinding conditions change for each wafer and it is not easy to determine thin-film removing speed accurately. SOLUTION: The technique and apparatus for monitoring and measuring optically a thin film 11 under the influence of a change in film thickness and the like during rotation 10 are disclosed. An optical signal is fed in a given path from an area to be monitored through a rotating shaft 6 and released in coupling from the rotating area to be monitored, and the terminal point of flattening process can be determined when the signal is analyzed. Optical measuring technique based on the interference light intensity and spectroscopic luminosity is used for control of actual terminal point at the original site for flattening process, in which chemical/mechanical polishing is carried out in a manufacturing step of semiconductor or various kinds of optical systems.
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