| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element for lowering contact resistance, improving the leakage current characteristic of a junction part and manufacturing an ultrahigh integrated semiconductor element by increasing the thickness of Ti vapor deposition and making Si atom consumption in the junction part to be minimum. SOLUTION: The manufacturing method of this semiconductor element includes a stage of supplying a semiconductor substrate where an element isolation film, a gate and junction part are formed, and forming a mask insulating film above the gate and gate spacers on both sidewalls, a stage of forming a silicon layer on the exposed surface of the junction part, a stage of vapor- depositing Ti by a plasma CVD method by using TiCl4 gas and H2 gas, and forming a TiSi2 layer on the silicon layer, and a stage of removing the Ti layer which is left unreacted after the formation of the TiSi2C layer.
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