SEMICONDUCTOR MEMORY ELEMENT HAVING SELF-ALIGNED CONTACT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide self-aligned contacts which are improved in process margin by preventing the occurrence of short circuits between contacts for bit lines and contacts for storage electrodes. SOLUTION: The occurrence of short circuits between contacts 25 for bit lines and contacts 35 for storage electrodes can be prevented through a simple process by simultaneously self-aligning the contacts with bit lines 27 and spacers formed on the side walls of a gate electrode pattern 17. When the contacts 35 are formed, in addition, the misalignment margin is increased in a photographic process for forming the contacts 35 by arranging the contacts 35 zigzag so that the contacts 35 may be deviated as much as possible to the outside of each active area. Moreover, when starting CMP or etch back in a state where a conductive film is vapor deposited on the whole surface after the contacts 25 are formed, the contacts 25 are etched to the heights of mask layers.