发明名称 |
MEMORY DEVICE HAVING PEDESTAL COLLAR STRUCTURE FOR CHARGE-HOLDING IMPROVEMENT OF TRENCH-TYPE DRAM CELL AND FORMING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a method for a trench-type capacitor improved in its charge holding capability. SOLUTION: The memory device includes a trench 23 which is formed on a substrate and has an upper part. A collar oxide film 21 is arranged at the upper part of the trench. A collar oxide film includes a pedestal 25. A conductor is charged in the trench. The pedestal reduces a leak of charges in the conductor. The method for forming the memory device, having the collar oxide film having the pedestal collar, is also disclosed. |
申请公布号 |
JP2002026146(A) |
申请公布日期 |
2002.01.25 |
申请号 |
JP20010180648 |
申请日期 |
2001.06.14 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
DIVAKARUNI RAMA;JAMMY RAJARAO;BYOON WAI KIMU;MANDELMAN JACK A;SUDO AKIRA;TOBBEN DIRK |
分类号 |
H01L21/8242;H01L27/108;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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