| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, or a semiconductor laser, which has high production yield, adequate productivity necessary for lowering the cost, satisfactory initial characteristics, and high reliability, by eliminating complicated manufacturing process. SOLUTION: By forming a nitride semiconductor layer 108 containing a plurality of group-III elements on a base body surface having a concave/convex structure, at least one among the composition ratio of the group-III elements, bandgap energy, refractive index, conductivity, and resistivity, of the nitride semiconductor layer 108, is changed in accordance with the concave/convex structure of the base body. By conducting an etching for forming a concave S by heating in an atmosphere containing hydrogen and using a layer containing Al as an etch-stopping layer 103, controllability of the etching, and yield, can be enhanced without concern on dispersion of etching depth or the like. Also, since the etching and regrowth can be made continuously, cheap process is possible. |
