NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL APPARATUS CONTAINING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element of high luminous efficiency. SOLUTION: This nitride semiconductor light-emitting element contains a light-emitting layer 106 having a multiple quantum well structure consisting of a plurality of quantum wells and a plurality of barrier layers alternately stacked on each other, wherein each quantum well layer is composed of InGaNP, and each barrier layer is composed of a nitride semiconductor layer.