| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable preventing reduction of storage capacity being more effective by an accidental write-in error in a non-volatile semiconductor storage device being electrically writable and erasable like a flash memory. SOLUTION: A status register (32) in a non-volatile semiconductor storage chip is provided with a bit (B7) indicating whether access from the outside of a chip can be performed or not, a bit (B4) indicating whether write-in is finished normally or not, and a bit (B6) whether normal write-in can be performed by performing write-in again or not.</p> |
