| 摘要 |
<p>PROBLEM TO BE SOLVED: To actualize a MONOS type memory which enables fast writing with a small current and is superior in scaling property. SOLUTION: This device is composed of a substrate (well W), a channel- forming region, and reverse conduction type semiconductors across the channel- forming region. Further, the device is formed in 1st and 2nd impurity regions SBLi and SBLi+1 which serve as sources or drains, when operating, gate insulating films 10a, 10b, and 14, a gate electrode WL on the channel-forming region, and a charge accumulating means (carrier trap) in the gate insulating films 10a and 10b, discretely, in a plane opposite to the channel-forming region and in the film thickness direction and in hot holes, resulting from a tunnel current between bands are injected from the impurity regions SBLi and/or SBLi+1 in the operation.</p> |
