摘要 |
PROBLEM TO BE SOLVED: To provide an electric charge multiplying device which enlarges dynamic range of a solid-state image sensor to increase required amount for an electric charge read-out system. SOLUTION: A solid-state image sensor having a read-out architecture incorporating an electric charge multiplying device comprises a first CCD register at least a second CCD register and connected to the first CCD register through an electric charge overflow barrier. The second CCD register collects overflow electric charges and transfers the electric charges to at least one detection node set in each register, with the electric charge conversion sensitivity varying at each electric charge conversion node.
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