| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer and its manufacturing method which has a stable defectless layer formed on a surface layer and impurity gettering zones of clustered fine crystal defect groups formed in an inner layer deeper than the defectless layer and is suited for forming devices. SOLUTION: The silicon single crystal wafer is manufactured by implanting N ions into the surface of a silicon mirror wafer obtained by the single crystal pulling method and high-temperature heat treating in a hydrogen atmosphere, to form a substantially defectless surface layer 1 at a depth of 10-25μm from the surface of the silicon wafer crystal and defect clustered zones 3 having a defect density of 106 defects/cm3 or more in an inner layer underlying the surface layer.
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