| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V nitride compound semiconductor device and its manufacturing method which reduces both the resistivity of a p-type clad layer and the element resistance. SOLUTION: A contact interface of a p-type superlattice layer 1 and a light active layer 2 is nonparallel, especially vertical to a laminating plane of the p-type superlattice layer 1. Holes migrate along an interface of two kinds of semiconductor layers constituting the superlattice layer 1 and are injected into the light active layer 2, this reducing the element resistance. |
