NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having a good crystallinity nitride semiconductor layer. SOLUTION: The light emitting element comprises a sapphire substrate 1, an oxygen-containing layer 4 made of an oxygen-containing nitride located on the sapphire substrate 1 and a third buffer layer 5 made of a nitride semiconductor located on the oxygen-containing layer 4.