| 摘要 |
PROBLEM TO BE SOLVED: To prevent a depleted layer at a part of gate electrode near the interface with a gate insulating film and to form a T-type gate electrode with precision, related to an insulated gate semiconductor device and its manufacturing method. SOLUTION: A poylcrystal semiconductor layer 3 containing at least Si and Ge which contacts a gate insulating film 2 as well as a polycrystal Si layer 4 provided on the polycrystal semiconductor layer 3 containing at least Si and Ge constitute a gate electrode, especially a T-type gate electrode.
|
