| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be adapted to a change in specification more easily than the conventional device by only changing the masks of partial wiring layers even when many wiring layers exist. SOLUTION: This semiconductor device is provided with a semiconductor substrate 10 having first and second regions, a plurality of gate electrodes 31 and 32, impurity diffusion regions 11-16, and N layers of wiring layers containing (M-1)-th wiring 51-56 electrically connected to the gate electrode of prescribed transistors or impurity diffusion regions formed in the first and second regions and M-th wiring 71-72 electrically connected to the gate electrodes of prescribed transistors or impurity diffusion regions formed in the first region only (N and M are integers meeting the relation of 2<=M<=N).
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