| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is equipped with a flash memory cell and has a fast write speed. SOLUTION: This semiconductor memory device is equipped with a memory cell, having a channel region and a drain region and a source region formed on both the sides of the channel region, a floating gate formed on the channel region across a 1st oxide film, and a control gate formed on the floating gate across a 2nd oxide film on a p-type Si substrate. The floating gate is formed of a 1st region on the channel region, and a 2nd area which is wider than the 1st region and sectioned into a T shape. The height of the 1st region is so set that, when a control voltage is applied to the floating gate, the potential of the floating gate becomes maximum.
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