发明名称 TEST METHOD FOR FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a test method for ferroelectric memory by which normal/ defective conditions of an imprint characteristic and an imprint lifetime can be discriminated efficiently with non-destruction from a hysteresis characteristic of a capacitor in a ferroelectric memory. SOLUTION: When a hysteresis characteristic of a capacitor in a ferroelectric memory is measured and this value is displayed by a coordinates of which the axis of abscissa indicates applied voltage and the axis of ordinate indicateds quantity of polarization charges, a tangential line of an intersection of this hysteresis characteristic curve and the abscissa or the ordinate is quantified as a parameter, a parameter valtue indicating the lifetime is obtained from relation between this parameter and a lifetime by an imprint characteristic of the ferroelectric memory, and normal/defective condition of an imprint characteristic and an imprint lifetime of the ferroelectric memory is discriminated making this value as discrimination reference.
申请公布号 JP2002025295(A) 申请公布日期 2002.01.25
申请号 JP20000205327 申请日期 2000.07.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAGAHASHI KATSUMI
分类号 H01L21/66;G11C11/22;G11C29/00;G11C29/56;(IPC1-7):G11C29/00 主分类号 H01L21/66
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