| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sensing sensitivity is improved and which can sufficiently amplify data superimposed on a bit line and realize a stable operation, and its driving method. SOLUTION: In this semiconductor memory device including a sense amplifier 40 that is enabled by a sense amplifier control signal and senses and amplifies the data superimposed on bit lines BL and /BL when a fixed power supply voltage is applied to the amplifier 40, the amplifier 40 is controlled by a plurality of switching control signals and includes a plurality of switching means which are changed to amplifiers that correspond to a plurality of amplifying systems such as a negative feedback differential amplifying system, a normal differential amplifying system, a positive feedback differential amplifying system and a cross coupled latch type amplifying system during the amplifier 40 is enabled.
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