| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method which is excellent in the controllability of the component of a resistance film capable of being externally attached to an emitter electrode or a source electrode, by a method wherein a proper positive temperature coefficient which is not so sudden as to cut off a circuit and which suppresses a thermal runaway, a large resistivity which can be used also for a bias resistance and a high reliability against a crack, a blowout or the like even when the resistance film is made thin are given to a ballast resistance used to suppress the thermal runaway caused by a rise in the ambient temperature of a semiconductor element. SOLUTION: The thin-film resistor is constituted of two or more kinds of elements from among Group 2A to 7A in the periodic table of elements and only oxygen in Group B, and the ratio of numbers of atoms of the oxygen is set at 50% or less. A target which contains the two or more kinds of elements in Group 2A to 7A is formed. The two or more kinds of elements as single bodies or their oxide are arranged on the face of the target so as to be sputtered in a mixed gas of oxygen and an element in Group 0. The thin-film resistor is installed in series with the emitter electrode or the source electrode of a transistor.
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