| 摘要 |
PROBLEM TO BE SOLVED: To provide an AlGaInP light emitting element having high reliability by preventing deterioration of a window layer due to stress and oxidation of an active layer, and a method for manufacturing the same. SOLUTION: In the case of growing an epitaxial layer containing an active layer 4 and a window layer 6 on an n-type GaAs substrate 1 by an MOVPE method, the layer 8 has a carrier concentration of 5×1018 cm-3 or more and is formed of an AlGaInP layer having a larger band gap than that of the layer 4. The layer 6 contains a small Al composition, the stress in the layer 4 and deterioration of the layer 6 due to oxidation caused by mismatching of lattice constants can be prevented by using the AlGaInP layer completely lattice- matched to the substrate 1, and the condition of small electric resistance necessary for the layer 6 can be satisfied by incorporating the carrier concentration of 5×1018 cm-3 or more in the layer 6. |
