| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and its manufacturing method, and semiconductor light emitting equipment that can improve external quantum efficiency and at the same time reduce an operating voltage and improve reliability by coping with both an ohmic property and a high reflection factor and at the same time by preventing the mutual diffusion of metal for composing an electrode in electrode structure, or to provide semiconductor light emitting device and semiconductor light emitting equipment that can improve the external quantum efficiency by inhibiting diffusion and absorption of light in an electrode. SOLUTION: A p-type electrode 26 for injecting current to an InGaN active layer 22 on a sapphire substrate 20 is composed of an Ni layer 32 that is used as an ohmic electrode for achieving ohmic contact with a p-type GaN layer 24, an Mo layer 33 as a barrier electrode, an Al layer 34 as a high-reflection electrode, a Ti layer 35 that becomes the barrier electrode, and an Au layer 36 that becomes an overcoat electrode for improving the contact property with a sub mount 13 on a lead frame 12. |
