| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated nitride semiconductor light emitting element having a large area and high efficiency. SOLUTION: A plurality of light emitting elements are juxtaposed on a substrate. Each light emitting element has a rectangular n-type layer isolated from an n-type gallium nitride compound semiconductor layer formed on the substrate by an isolating groove, a p-type layer provided on the n-type layer so that a rectangular p-type gallium nitride compound semiconductor is such that its one long side and its two short sides respectively approach the one long side and the two short sides of the n-type layer, an n-type side ohmic electrode provided on the n-type layer between the other long side of the n-type layer and the other long side of the p-type layer and having substantially the same length as the long side of the p-type layer, a p-type ohmic electrode formed on substantially overall surface of the p-type layer, and a p-type pad electrode provided along the one long side of the p-type layer on the p-type ohmic electrode in such a manner that an interval between the one long side of the p-type layer and the n-type side ohmic electrode is set to 250 μm or less. |
