| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which suppresses the accumulation of charges to the semiconductor layer of an SOI substrate when ions are implanted and prevents the damage of a box layer and a gate oxidized film. SOLUTION: A field oxidized film 20 is formed on the semiconductor layer 18 formed on a box layer 16 constituting the SOI wafer 12 of the semiconductor device 100 by LOCOS method. The gate oxidized film 22 is formed on the surface of the semiconductor layer 18. A conductive layer 102 is formed on the field oxidized film 20 and the gate oxidized film 22. The conductive layer 102 is constituted of a shapeless carbon layer which is formed by a sputtering method and whose thickness is 5 nm to 10 nm. A middle dosed ion implanting device implants B+ 24 in the interface of the semiconductor layer 18 and the gate oxidized film 22. The charges 38 caused in the semiconductor layer 18 when the ions are implanted pass through the gate oxidized film 22 and the conductive layer 102 as FN current are removed. A gate electrode 26 is formed on the gate oxidized film 22 after the conductive layer 102 is removed.
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