SURFACE TREATING METHOD OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a surface treating method of a substrate having irregularities on the surface (e.g. a semiconductor substrate having protruding insulating parts and recessed electrode parts formed on the surface being used in the formation of a metal film pattern) in which only the protrusions can be reformed selectively in the fabrication of a semiconductor device. SOLUTION: Properties at the surface part of protrusions on a substrate (A) are varied selectively by touching the surface part of a planar or sheet-like article (B) only to the surface part of protrusions on the substrate (A) having irregularities on the surface.