发明名称 DICING METHOD FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To prevent the occurrence of defective cuts in dicing a semiconductor wafer on which adhesive is applied by improving the elastic modulus of the adhesive. SOLUTION: At the time of applying an adhesive 40 to one face side of a semiconductor wafer 11 and dicing a semiconductor wafer from an adhesive applied face side, the temperature of the adhesive is set to be not more than a glass transfer temperature Tg, the semiconductor wafer is diced. The high frequency vibration of not less than 105 Hz is given to the adhesive and the semiconductor wafer is diced. Thus, the wafer can be diced in an area where the elastic modulus of the adhesive is high and the adhesive is prevented from bending. The pressure of a dicing blade 60 can surely be transmitted to the adhesive and the occurrence of the cutting defects of the sensor chip 10 can be prevented.
申请公布号 JP2002025945(A) 申请公布日期 2002.01.25
申请号 JP20000205525 申请日期 2000.07.06
申请人 DENSO CORP 发明人 IKEZAWA TOSHIYA;TANAKA MASAAKI;SAITO TAKASHIGE
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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