| 摘要 |
PROBLEM TO BE SOLVED: To provide a grooved semiconductor device in which formation of cavities in a source electrode is suppressed and a method of manufacturing the device. SOLUTION: In the semiconductor device, a P-type base layer 4, an N+-type source layer 5, and a P+-type base contact layer 11 are formed on an N-type epitaxial layer 2 with a groove 3. A gate oxide film 7, a gate electrode 8, and an interlayer insulating film 10 are formed on the groove 3. In addition, a source electrode 12 is formed on the insulating film 10 in such a way that the electrode 12 is brought into ohmic contact with the base contact layer 11 and source layer 5 throughs contact holes 13. The insulating layer 10 is formed to meet L3>=L2>=L1 and L4>=L5.
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