发明名称 Microwave device production involves cutting a garnet single crystal substrate into chips and growing a magnetic garnet single crystal film on each chip by liquid-phase epitaxial growth
摘要 Production of a microwave device involves cutting a garnet single crystal substrate into a number of chips; and simultaneously growing a magnetic single crystal on the surface of the chips by liquid-phase epitaxial growth. Preferred Features: The garnet single crystal substrate (e.g., Gd3Ga5O12) has a (111) surface and it is cut so that the (110) surfaces appear as pairs of opposite cutting surfaces and the (211) surfaces appear as another pair of opposite cutting surfaces. After cutting the substrate into more than 500-10000 chips, the chips are placed in a meshed container, and the meshed container is rotated and immersed into a bath containing a molten single-crystal source for growing a magnetic single crystal garnet film (e.g., Y3Fe5O12) on each chip.
申请公布号 FR2812006(A1) 申请公布日期 2002.01.25
申请号 FR20010009713 申请日期 2001.07.20
申请人 MURATA MANUFACTURING CO LTD 发明人 TAKAGI TAKASHI;FUJINO MASARU
分类号 C30B29/28;C30B19/02;C30B19/06;C30B19/12;H01F41/28 主分类号 C30B29/28
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