SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a technology for realizing fast operation of an MISFET of 0.15μm or later generation. SOLUTION: With a gate electrode 10n and a side wall spacer 15 as masks, n-type impurity is ion-implanted in the normal direction of a substrate 1 to form a source/drain diffusion region 11b. Then an n-type impurity is ion- implanted by oblique implanting at a specified angle against the normal direction of the substrate 1, so that an n-type semiconductor region 16 is formed at a position 20-40 nm deep from the surface of substrate 1 whose impurity concentration is higher relative to a source/drain diffusion region 11a.