| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a passivation film composed of a ferroelectric or high dielectric material and having a high moisture resistance is formed on a capacitor for preventing the deterioration of the capacitor and a method of manufacturing the device. SOLUTION: The semiconductor device has a transistor having a first impurity region, a second impurity region, and a gate electrode formed on a semiconductor substrate; a capacitor having a first insulating film, a dielectric film composed of a ferromagnetic or high dielectric material, and upper and lower electrodes which hold the insulating film and dielectric film between them; and a second insulating film which is formed on the capacitor. The semiconductor device also has a wiring layer formed on the second insulating film, a nitride film coating the wiring layer, and a first silicon oxide film which is formed on the nitride film and contains nitrogen in at least its surface. |
