发明名称 METHOD AND APPARATUS FOR IMAGING SAMPLE USING LOW PROFILE ELECTRON DETECTOR FOR CHARGED PARTICLE BEAM IMAGING SYSTEM CONTAINING ELECTROSTATIC MIRROR
摘要 <p>PROBLEM TO BE SOLVED: To correct aberrations of secondary electrons to further improve the detection efficiency of an electron detector, when a charged particle beam imaging system is used to image a sample. SOLUTION: For the charged particle beam method and apparatus, a primary electron beam is used to irradiate a sample, thereby inducing emission of secondary and back scattered electrons respectively, having information as to the form structure and the material structure of the sample. The sample is an article to be inspected. The electrons emitted from the sample are deflected in an electric field of an electron mirror and detected by an electron detector in the apparatus. The electron mirror serves to permit secondary electrons traveling near the optical axis of the device to be detected and corrects the aberration of the secondary electrons. The electron mirror accelerates the electrons to improve the detection efficiency of the electron detector and moreover improves the variation characteristics of the flight time upon collection of the secondary electrons. A second electron mirror may be used for the purpose of further controlling the landing direction of the electrons.</p>
申请公布号 JP2002025492(A) 申请公布日期 2002.01.25
申请号 JP20010135864 申请日期 2001.05.07
申请人 APPLIED MATERIALS INC 发明人 DAVID A CREW
分类号 G01N23/225;G01Q30/02;G21K5/04;H01J37/244;H01J37/28;(IPC1-7):H01J37/244 主分类号 G01N23/225
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