发明名称 MEMORY BLOCK AND SEMICONDUCTOR STORAGE DEVICE USING THE MEMORY BLOCK
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which memory capacity can be increased without deteriorating an operation speed and which is suitable to mixed loading with logic. SOLUTION: This semiconductor storage device has a memory block which has data input-output circuits that are arranged in accordance with a memory cell arrays and arranged in the order of data transfer and control circuits arranged in the order of a critical path from an input buffer up to a row decoder and can independently operate, and a control circuit in which a plurality of the memory blocks are adjacently arranged and which branches an external control signal and an external address signal within the memory blocks and has a function for controlling the operation of each memory block.</p>
申请公布号 JP2002025273(A) 申请公布日期 2002.01.25
申请号 JP20000202676 申请日期 2000.07.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI KOTARO;MOTOMOCHI KENJI;AGATA MASASHI;KURUMADA MAREFUSA;SHIRAHAMA MASANORI
分类号 G11C17/00;G11C11/401;G11C11/41;G11C11/413;G11C16/06;G11C29/00;G11C29/04;G11C29/14;(IPC1-7):G11C11/41 主分类号 G11C17/00
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