发明名称 |
MEMORY BLOCK AND SEMICONDUCTOR STORAGE DEVICE USING THE MEMORY BLOCK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which memory capacity can be increased without deteriorating an operation speed and which is suitable to mixed loading with logic. SOLUTION: This semiconductor storage device has a memory block which has data input-output circuits that are arranged in accordance with a memory cell arrays and arranged in the order of data transfer and control circuits arranged in the order of a critical path from an input buffer up to a row decoder and can independently operate, and a control circuit in which a plurality of the memory blocks are adjacently arranged and which branches an external control signal and an external address signal within the memory blocks and has a function for controlling the operation of each memory block.</p> |
申请公布号 |
JP2002025273(A) |
申请公布日期 |
2002.01.25 |
申请号 |
JP20000202676 |
申请日期 |
2000.07.04 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAYASHI KOTARO;MOTOMOCHI KENJI;AGATA MASASHI;KURUMADA MAREFUSA;SHIRAHAMA MASANORI |
分类号 |
G11C17/00;G11C11/401;G11C11/41;G11C11/413;G11C16/06;G11C29/00;G11C29/04;G11C29/14;(IPC1-7):G11C11/41 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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