发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a flash memory provided with a sense amplifier which has sufficient read-margin and performs accurate verifying operation. SOLUTION: This device is provided with a constant current source 18 having a positive temperature characteristic and a constant current source 30 having a negative temperature characteristic. In a sense amplifier 24, a sense amplifier load current I6 for verification having no temperature characteristic is generated by synthesizing a current I5 having a positive temperature characteristic and a current I4 having a negative temperature characteristic. On the other hand, a sense amplifier load current I8 for normal-read is generated by synthesizing a current I3 having a positive temperature characteristic and a current I7 having dependency on power source voltage Vcc.</p>
申请公布号 JP2002025285(A) 申请公布日期 2002.01.25
申请号 JP20000202081 申请日期 2000.07.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 OGURA TAKU
分类号 G11C16/06;G11C16/26;(IPC1-7):G11C16/06 主分类号 G11C16/06
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