| 摘要 |
PROBLEM TO BE SOLVED: To efficiently suppress solder from extruding from element sides. SOLUTION: An n-GaAs buffer layer 2, n-A1GaAs clad layer 3, AlGaAs active layer 4, p-AlGaAs clad layer 5 and p-GaAs cap layer 6 are laminated on an n-GaAs substrate 1. An SiO2 insulation film 7 and a p-side electrode 8 are laminated on the cap layer 6. In a semiconductor laser element E2, a recess 1a is formed into a central portion of the backside of the n-GaAs substrate 1, and solder-extrusion-blocking barriers 12 are provided on the sides of the element in a solder layout region on a bonding surface. Semiconductor laser elements E1, E2 are laminated on a base 11 and soldered.
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