| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having the trench isolation which is so improved that a transistor may be operated normally. SOLUTION: A resist pattern 104, having openings even on a printing area to form trenches 105 for trench isolation, is formed on a semiconductor wafer 101. Using the resist pattern 104 as a mask, the surface of the semiconductor wafer 101 is etched to form trenches 105 for trench isolation. After removing the resist pattern 104, an oxide film 106 is formed on the semiconductor wafer 101, so as to fill in the trenches 105 for trench isolation. Then, the oxide film 106 is polished by CMP to form the trench isolation 108.
|
