| 摘要 |
<p>A semiconductor light-emitting device that can be produced with fine tolerances without complexing the manufacturing process and without inviting degradation of crystallinity. A light-emitting device is fabricated by forming a selective crystal growth layer formed by selectively growing a Wurtzite compound semiconductor, a clad layer of first conductivity type formed on the selective crystal growth layer, an active layer, and a clad layer of second conductivity type. The active layer is the one extending parallel to different crystal faces, the one larger than the diffusion length of atoms forming a compound crystal, or the one comprising emission wavelength regions at least either the compositions or thicknesses of which are different from each other, and thereby the emission wavelengths of which are different from each other. Currents are injected into the emission wavelength regions, respectively. Thanks to the structure by selective growth, the bandgap energy varies in the same active layer, thereby producing a device and apparatus with fine tolerances without complexing the manufacturing process.</p> |
