发明名称 |
REDUCTION OF PLASMA CHARGE-INDUCED DAMAGE IN MICROFABRICATED DEVICES |
摘要 |
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.
|
申请公布号 |
WO0146993(A3) |
申请公布日期 |
2002.01.24 |
申请号 |
WO2000US42791 |
申请日期 |
2000.12.13 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
SHOHET, J., LEON;CISMARU, CRISTIAN;CERRINA, FRANCESCO |
分类号 |
H01J37/32;H01L21/00;(IPC1-7):H01L21/00;H01L21/302 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|