摘要 |
A method for determining wafer misalignment by using a pattern on a fine alignment target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer (200c) having an alignment target (222). In another step, the wafer is aligned using the alignment target. Next, a pattern (230) is created around the alignment target using an overlay. Then, the misalignment is determined between the alignment target (222) and the pattern (230) created around the alignment target.
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