发明名称 |
MOSFET GATE ELECTRODES HAVING PERFORMANCE TUNED WORK FUNCTIONS AND METHODS OF MAKING SAME |
摘要 |
An insulated gate field effect transistor (FET) of a particular conductivity type, has as a gate electrode, a non-semiconductive material with a work function that approximates the work function of a semiconductive material that is doped to be of the same conductivity type. In a particular embodiment, an integrated circuit includes an n-channel FET having a tantalum-based gate electrode with a work function approximately the same as n-doped polysilicon, and a p-channel FET has a tantalum nitride-based gate electrode with a work function approximately the same as p-doped polysilicon.
|
申请公布号 |
US2002008257(A1) |
申请公布日期 |
2002.01.24 |
申请号 |
US19980165009 |
申请日期 |
1998.09.30 |
申请人 |
BARNAK JOHN P.;CHAU ROBERT S.;LIANG CHUNLIN |
发明人 |
BARNAK JOHN P.;CHAU ROBERT S.;LIANG CHUNLIN |
分类号 |
H01L21/8238;H01L29/49;(IPC1-7):H01L29/80;H01L31/112;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|