发明名称 |
REMOVING INHERENT STRESS VIA HIGH TEMPERATURE ANNEALING |
摘要 |
Methods and apparatus are provided which decrease the amount of movement likely to occur during processing of a substrate. In particular, a horizontally supported dielectric panel is subjected to a series of processing steps during which the panel is heated, cooled, or maintained at a fixed temperature so as to a achieve a 2 to 1 reduction in material movement during subsequent processing. It is contemplated that application of the disclosed methods to a dielectric panel will be particularly beneficial when application is accomplished prior to laser drilling and sputtering the panel. |
申请公布号 |
WO0182663(A3) |
申请公布日期 |
2002.01.24 |
申请号 |
WO2001US12705 |
申请日期 |
2001.04.19 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
POMMER, RICHARD;YARDLEY, JIM;ROETERS, GLEN |
分类号 |
C23C14/34;B29C71/02;C23C14/02;C23C14/20;C23C14/54;H05K3/00;H05K3/06;H05K3/16;H05K3/40 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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