发明名称 Data reading method and semiconductor memory device
摘要 Data stored in a ferroelectric capacitor having its one electrode connected to a plate line and its other electrode connected to a bit line is read out by inputting a pulse to the plate line and then performing a sense operation to amplify the data. The sense operation is performed after a signal from the non-switching ferroelectric capacitor is decreased from the value right after pulsing PL. A predetermined time is ensured from input of the pulse to the sense operation. With this arrangement, the signal output can be decreased. The signal output margin can be ensured, and the service life of a device can be increased by decreasing the output from the bit line due to the imprint effect on the capacitor.
申请公布号 US2002008986(A1) 申请公布日期 2002.01.24
申请号 US20010818579 申请日期 2001.03.28
申请人 FUJITSU LIMITED 发明人 TAMURA TETSURO
分类号 G11C14/00;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C14/00
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